Document Type

Article

Publication Date

2-1-1998

Abstract

Presents an enhanced analytical model to calculate junction depth and Hg interstitial profile during n-on-p junction formation in HgCdTe photodiodes. Detailed information on the enhanced model; Function of the model; Information on HgCdTe; Detailed information on how the model was obtained.

Comments

Copyright © 1998 AIP Publishing LLC. The published article may be found at:http://dx.doi.org/10.1063/1.366829.

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