Publication Date

1-1-2026

Document Type

Conference Proceeding

Publication Title

10th IEEE Electron Devices Technology and Manufacturing Conference Emerging Semiconductor Devices and Manufacturing Technologies Edtm 2026

DOI

10.1109/EDTM65772.2026.11496956

Abstract

Cryogenic devices at 4.2K are indispensable in the control electronics for large-scale quantum computers. Due to its small manufacturing volume, a standard commercial foundry process is likely to be used in the near and medium terms. Moreover, 77K electronics are promising for high-speed server applications. Besides digital circuits, analog circuits with non-minimal channel length are particularly important in quantum computing control. In this paper, special structures are designed to characterize the device properties of medium- and long-channel length devices at 292K, 77K, and 4.2K in a commercial 14nm FinFET process. About 100 structures were measured for both NMOS and PMOS. The temperature-dependent characteristics of threshold voltage (VTH,sat), maximum transconductance (gm), on-state current and resistance (ION, RON), subthreshold swing (SS), drain-induced-barrier-lowering (DIBL), output impedance (ROUT), and off-state properties are characterized. Moreover, transistors with different threshold voltages are studied. It is found that low-voltage devices are more suitable for 4.2 K operation due to less Coulomb scattering. Unlike other reports on short-channel devices, it is also found that Rout increases at cryogenic temperature in medium- and long-channel devices, and gmRout can be increased by about 62.5% in p-type long-channel devices.

Funding Number

IO221107-03420-01

Funding Sponsor

Samsung

Keywords

Cryogenic Electronics, FinFET, Quantum Computing

Comments

© 2026 IEEE.  Personal use of this material is permitted.  Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.

Department

Electrical Engineering

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