Publication Date

4-19-2019

Document Type

Article

Publication Title

Applied Physics Letters

Volume

114

DOI

10.1063/1.5053756

Abstract

We propose a non-destructive means of characterizing a semiconductor wafer via measuring parameters of an induced quantum dot on the material system of interest with a separate probe chip that can also house the measurement circuitry. We show that a single wire can create the dot, determine if an electron is present, and be used to measure critical device parameters. Adding more wires enables more complicated (potentially multi-dot) systems and measurements. As one application for this concept we consider silicon metal-oxide-semiconductor and silicon/silicon-germanium quantum dot qubits relevant to quantum computing and show how to measure low-lying excited states (so-called "valley" states). This approach provides an alternative method for characterization of parameters that are critical for various semiconductor-based quantum dot devices without fabricating such devices.

Comments

This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Applied Physics Letters, Volume 114, Article 152105, 2019 and may be found at https://doi.org/10.1063/1.5053756.

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Department

Physics and Astronomy

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