IEEE Journal of the Electron Devices Society
We postulate that in ultra-scaled Field Effect Transistors (FET), such as nanowires in sub-7nm technology, the source contact will act as an energy filter and increase the effective temperature of carriers arriving at the channel barrier. This is due to the absence of inelastic scattering in the short source-contact-to-channel region. As a result, the Sub-threshold Slope (SS) will increase substantially. In this paper, we verify this energy filtering effect through numerical calculations and Technology Computer-Aided-Design (TCAD) simulations calibrated to quantum solvers for electrostatics. It is found that SS degradation increases as the source metal workfunction increases. At 300K, in the nanowire simulated, SS increases from 94mV/dec to 109mV/dec for gate length, LG, = 10 nm and from 72mV/dec to 88mV/dec for LG= 15 nm, representing an increase of effective carrier temperature from 300K to more than 340K. The simulation result is also verified by including the Schroedinger equation (SE) for tunneling in TCAD simulation. It is also found that such an effect is worse at higher device temperature and disappears at cryogenic temperature.
ballistic transport, energy filter, nanowire, Schottky contact, Sub-threshold slope
Creative Commons License
This work is licensed under a Creative Commons Attribution 4.0 License.
Johan Saltin, Nguyen Cong Dao, Philip H.W. Leong, and Hiu Yung Wong. "Energy Filtering Effect at Source Contact on Ultra-Scaled MOSFETs" IEEE Journal of the Electron Devices Society (2020): 662-667. https://doi.org/10.1109/JEDS.2020.2981251
This is the Version of Record and can also be read online here.