Title

Applications of Oxygen Inserted Silicon Devices in Power and RF

Publication Date

4-1-2020

Document Type

Conference Proceeding

Department

Electrical Engineering

Publication Title

2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)

DOI

10.1109/EDTM47692.2020.9117944

Abstract

Insertion of partial monolayers of oxygen during silicon epitaxy (OI) has been shown experimentally and by simulation to facilitate the blocking interstitials during oxidation and thus to enable precision engineering of dopant profiles. This invited paper describes examples of recent OI advances, including the engineering of improved 5V NMOS power devices and RF-SOI switches.

Keywords

5V NMOS power, RF SOI

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