Applications of Oxygen Inserted Silicon Devices in Power and RF
Publication Date
4-1-2020
Document Type
Conference Proceeding
Publication Title
2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)
DOI
10.1109/EDTM47692.2020.9117944
Abstract
Insertion of partial monolayers of oxygen during silicon epitaxy (OI) has been shown experimentally and by simulation to facilitate the blocking interstitials during oxidation and thus to enable precision engineering of dopant profiles. This invited paper describes examples of recent OI advances, including the engineering of improved 5V NMOS power devices and RF-SOI switches.
Keywords
5V NMOS power, RF SOI
Department
Electrical Engineering
Recommended Citation
Robert J. Mears, Hideki Takeuchi, Yi Ann Chen, Richard Burton, Shuyi Li, Robert J. Stephenson, Marek Hytha, Nyles W. Cody, K. Doran Weeks, Dmitri Choutov, Daniel Connelly, and Hiu Yung Wong. "Applications of Oxygen Inserted Silicon Devices in Power and RF" 2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) (2020). https://doi.org/10.1109/EDTM47692.2020.9117944
