Publication Date
11-1-2022
Document Type
Conference Proceeding
Publication Title
Solid-State Electronics
Volume
197
Issue
SI: LETTERS from the International Conference on Simulation of Semiconductor Processes and Devices 2022 Download special issue
DOI
10.1016/j.sse.2022.108440
Abstract
In this paper, we propose a simulation methodology for robust and accurate ab-initio quantum transport simulation down to 3 K of an n-type Si nanowire. This is important to understand the subthreshold swing (SS) at cryogenic temperature. We show that for LG = 10 nm, the SS is fully dominated by direct tunneling at cryogenic temperature, which is the first time to be demonstrated using ab-initio simulation, to the best of our knowledge. We propose a method to achieve more than 2x speed up in the simulation time and achieve convergence at high gate biases. It is also shown that from the leakage perspective, there is no advantage in operating LG = 10 nm transistor below 77 K.
Funding Number
2046220
Funding Sponsor
National Science Foundation
Keywords
Ab initio, Cryogenic electronics, Nanowire, Quantum transport, Subthreshold slope
Creative Commons License
This work is licensed under a Creative Commons Attribution-Noncommercial-No Derivative Works 4.0 License.
Department
Electrical Engineering
Recommended Citation
Tom Jiao and Hiu Yung Wong. "Robust cryogenic ab-initio quantum transport simulation for LG = 10 nm nanowire" Solid-State Electronics (2022). https://doi.org/10.1016/j.sse.2022.108440
