AlGaN/GaN HEMT device physics and electrothermal modeling
Contribution to a Book
Thermal Management of Gallium Nitride Electronics
Marko J. Tadjer and Travis J. Anderson
Gallium nitride (GaN) has emerged as one of the most attractive materials for radio frequency (RF) and power conversion technologies that require high-power and high-frequency devices. This is due to the superior material properties of GaN including the wide bandgap (Eg =3.4eV), high saturation velocity (vs =3×107 cm/s), good electron mobility, large critical electric field (Ec ~3MV/cm), and reasonable thermal conductivity (Îº~150W/m-K at room temperature). The ~10× higher breakdown field than Si makes GaN devices suitable for high voltage operations while the high saturation velocity ensures its applicability for high-frequency operations, as shown in references. Among the various GaN-based devices, AlGaN/GaN high electron mobility transistors (HEMTs) are suitable for high-power applications due to their low on-resistance that stems from the two-dimensional electron gas (2DEG) formed near the AlGaN/GaN heterointerface due to the spontaneous and piezoelectric polarizations of GaN and AlGaN. In this chapter, we will explain detailed procedures to perform electrothermal modeling of AlGaN/GaN HEMTs.
Electrothermal modeling, Gallium nitride, High electron mobility transistor (HEMT), Sentaurus TCAD, Wide bandgap semiconductors
Bikramjit Chatterjee, Daniel Shoemaker, Hiu Yung Wong, and Sukwon Choi. "AlGaN/GaN HEMT device physics and electrothermal modeling" Thermal Management of Gallium Nitride Electronics (2022): 103-163. https://doi.org/10.1016/B978-0-12-821084-0.00012-3