Comprehensive Comparison of Fabricated 1.6-kV Punch-Through Design Ni/n-SiC Schottky Barrier Diode with Ar+Implant Edge Termination and Heterojunction p-NiO/n-SiC Diode
Publication Date
4-19-2021
Document Type
Conference Proceeding
Publication Title
2021 IEEE Latin America Electron Devices Conference (LAEDC)
DOI
10.1109/LAEDC51812.2021.9437747
Abstract
A comprehensive comparison of a punch-Through Ni/SiC Schottky diode with Ar+ implant edge termination and heterojunction NiO/SiC diode were conducted through fabrication, electrical evaluation, TCAD simulation analysis and reverse recovery evaluation. Both fabricated diodes exhibit high breakdown voltage of 1595V, utilizing a punch-Through design. The heterojunction NiO/SiC diode has shown ×0.5 less reverse leakage current than the Ni/SiC Schottky diode due to higher barrier height. The Ni/SiC Schottky diode, on the other hand, has shown 90% less reverse recovery time, indicating a small degree of minority carrier injection for the heterojunction NiO/SiC diode.
Keywords
Ar ion implant edge termination +, heterojunction, Nio, Schottky diode, Sic, Tcad
Department
Electrical Engineering
Recommended Citation
Atsushi Shimbori, Hiu Yung Wong, and Alex Q. Huang. "Comprehensive Comparison of Fabricated 1.6-kV Punch-Through Design Ni/n-SiC Schottky Barrier Diode with Ar+Implant Edge Termination and Heterojunction p-NiO/n-SiC Diode" 2021 IEEE Latin America Electron Devices Conference (LAEDC) (2021). https://doi.org/10.1109/LAEDC51812.2021.9437747
