A Physics-based TCAD Framework for NBTI
SI: LETTERS from the International Conference on Simulation of Semiconductor Processes and Devices 2022
A physics-based framework is incorporated in TCAD to model the primary mechanisms responsible for Negative Bias Temperature Instability (NBTI) in P channel High-K Metal Gate (HKMG) MOSFETs. Three underlying mechanisms are treated including interface trap generation-passivation via a Reaction-Diffusion (RD) model and its charge occupancy via an Activated Barrier Double Well Thermionic (ABDWT) model, hole trapping and de-trapping in pre-existing defects in the gate stack are modeled via an ABDWT model, and bulk trap generation-passivation is modeled via a Reaction-Diffusion-Drift (RDD) model. The framework is used to model measured NBTI time-kinetics for DC stress-recovery and various mixed DC-AC gate pulse segments for planar devices. Furthermore, the same framework is also used to test NBTI behavior in 3D FinFETs.
NBTI, RD model, ABDWT model, RDD model. threshold voltage shift, MOSFETs, TCAD modeling, hydrogen diffusion, interface trap generation, hole trapping, bulk trap generation
Ravi Tiwari, Meng Duan, Mohit Bajaj, Denis Dolgos, Lee Smith, Hiu Yung Wong, and Souvik Mahapatra. "A Physics-based TCAD Framework for NBTI" Solid-State Electronics (2022). https://doi.org/10.1016/j.sse.2022.108573