Journal of Applied Physics
An ensemble of silicon vacancy (SiV−) centers in diamond is probed using two-pulse correlation spectroscopy and multidimensional coherent spectroscopy. Two main distinct families of SiV− centers are identified, and these families are paired with two orientation groups by comparing spectra from different linear polarizations of the incident laser. By tracking the peak centers in the measured spectra, the full diamond strain tensor is calculated local to the laser spot. Measurements are made at multiple points on the sample surface, and variations in the strain tensor are observed.
Physics and Astronomy
Kelsey M. Bates, Matthew W. Day, Christopher L. Smallwood, Rachel C. Owen, Tim Schröder, Edward Bielejec, Ronald Ulbricht, and Steven T. Cundiff. "Using silicon-vacancy centers in diamond to probe the full strain tensor" Journal of Applied Physics (2021). https://doi.org/10.1063/5.0052613
This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Journal of Applied Physics, Volume 130, Issue 2, Article 024301, 2021 and may be found at https://doi.org/10.1063/5.0052613.