Publication Date
12-1-2022
Document Type
Article
Publication Title
Nature Communications
Volume
13
Issue
1
DOI
10.1038/s41467-022-34220-w
Abstract
The Hubbard model is an essential tool for understanding many-body physics in condensed matter systems. Artificial lattices of dopants in silicon are a promising method for the analog quantum simulation of extended Fermi-Hubbard Hamiltonians in the strong interaction regime. However, complex atom-based device fabrication requirements have meant emulating a tunable two-dimensional Fermi-Hubbard Hamiltonian in silicon has not been achieved. Here, we fabricate 3 × 3 arrays of single/few-dopant quantum dots with finite disorder and demonstrate tuning of the electron ensemble using gates and probe the many-body states using quantum transport measurements. By controlling the lattice constants, we tune the hopping amplitude and long-range interactions and observe the finite-size analogue of a transition from metallic to Mott insulating behavior. We simulate thermally activated hopping and Hubbard band formation using increased temperatures. As atomically precise fabrication continues to improve, these results enable a new class of engineered artificial lattices to simulate interactive fermionic models.
Funding Number
DE-EE0008311
Funding Sponsor
National Science Foundation
Creative Commons License
This work is licensed under a Creative Commons Attribution 4.0 License.
Department
Physics and Astronomy
Recommended Citation
Xiqiao Wang, Ehsan Khatami, Fan Fei, Jonathan Wyrick, Pradeep Namboodiri, Ranjit Kashid, Albert F. Rigosi, Garnett Bryant, and Richard Silver. "Experimental realization of an extended Fermi-Hubbard model using a 2D lattice of dopant-based quantum dots" Nature Communications (2022). https://doi.org/10.1038/s41467-022-34220-w
