Document Type

Article

Publication Date

January 2013

Abstract

The interfacial bonding and electronic structure of HfO2/GaSb interfaces has been investigated through first principles calculations. The calculated electronic structures of these interfaces reveal that some O-rich interfaces are semiconducting interfaces without any gap states. In contrast, for the interfaces with lower interfacial O content, gap states appear in the GaSb band gap, close to the conduction band. The valence band offsets are found to vary from 2.2 eV to 3.6 eV, depending on the interfacial O content. Our results suggest that GaSb is a suitable material to form high quality interface with HfO2.

Comments

SJSU users: Use the following link to login and access the article via SJSU databases.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Applied Physics Letters, volume 102, 2013, and may be found at https://doi.org/10.1063/1.4775665© 2013 American Institute of Physics

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