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Publication Date

Fall 2010

Degree Type

Thesis - Campus Access Only

Degree Name

Master of Science (MS)

Department

Electrical Engineering

Advisor

Lili He

Keywords

memristor, memristor-capacitor, RRAM, VerilogA

Subject Areas

Electrical Engineering

Abstract

Resistance change memories (RRAMs) have recently attracting much attention. The switching behaviors and mechanisms of RRAMs are still under investigation, many questions are still open. This thesis presents a comprehensive study of the switching behaviors and mechanisms of RRAMs. Various RRAM models are studied and analyzed. A VerilogA model of the memristor is introduced. The I-V characteristic of a single memristor, the frequency response of the memristor, and the zero-input response of a memristor-capacitor (MC) system are studied. This thesis shows that the time constant of a MC system is smaller than the time constant of a regular resistor-capacitor system. In addition, this thesis shows that the resistive switching behavior is more dominant in the low frequency range. This VerilogA model may help circuit designers in the study and design of RRAM-based circuits. Finally, various potential applications of RRAMs are introduced.

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