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Thesis - Campus Access Only
Master of Science (MS)
memristor, memristor-capacitor, RRAM, VerilogA
Resistance change memories (RRAMs) have recently attracting much attention. The switching behaviors and mechanisms of RRAMs are still under investigation, many questions are still open. This thesis presents a comprehensive study of the switching behaviors and mechanisms of RRAMs. Various RRAM models are studied and analyzed. A VerilogA model of the memristor is introduced. The I-V characteristic of a single memristor, the frequency response of the memristor, and the zero-input response of a memristor-capacitor (MC) system are studied. This thesis shows that the time constant of a MC system is smaller than the time constant of a regular resistor-capacitor system. In addition, this thesis shows that the resistive switching behavior is more dominant in the low frequency range. This VerilogA model may help circuit designers in the study and design of RRAM-based circuits. Finally, various potential applications of RRAMs are introduced.
Xia, Da, "Study of the Switching Mechanisms of Resistance Change Memories" (2010). Master's Theses. 3899.