Publication Date

2-25-2020

Document Type

Article

Publication Title

ECS Journal of Solid State Science and Technology

Volume

9

Issue

3

DOI

10.1149/2162-8777/ab7673

Abstract

In this paper, advanced β-Ga2O3 TCAD simulation parameters and methodologies are presented by calibrating simulation setup to vertical junctionless multi-gate transistor experimental data. Through careful calibration, several important β-Ga2O3 device physics are identified. The effects of compensation doping and incomplete ionization of dopants are investigated. Electron Philips unified carrier mobility (PhuMob) model, which can capture the temperature effect, is used. We also show that interfacial traps possibly play no role on the non-ideal sub-threshold slope (SS) and short channel effect is the major cause of SS degradation. The breakdown mechanism of the junctionless Ga2O3 transistor is also discussed and is shown to be limited by channel punch-through in off-state. The calibrated models match experimental Capacitance-Voltage (CV) and Current-Voltage (IV) well and can be used to predict the electrical performance of novel β-Ga2O3 devices.

Funding Sponsor

San José State University

Comments

This is the Version of Record and can also be read online here.

Creative Commons License

Creative Commons License
This work is licensed under a Creative Commons Attribution 4.0 License.

Department

Electrical Engineering

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