Fully analog ReRAM neuromorphic circuit optimization using DTCO simulation framework
Publication Date
9-23-2020
Document Type
Conference Proceeding
Publication Title
2020 International Conference on Simulation of Semiconductor Processes and Devices, (SISPAD)
Volume
2020-September
DOI
10.23919/SISPAD49475.2020.9241635
First Page
201
Last Page
204
Abstract
Neuromorphic inference circuits using emerging devices (e.g. ReRAM) are very promising for ultra-low power edge computing such as in Internet-of-Thing. While ReRAM synapse is used as an analog device for matrix-vector-multiplications, the neuron activation unit (e.g. ReLU) is generally digital. To further minimize its power and area consumption, fully analog neuromorphic circuits are needed. This requires Design-Technology Co-Optimization (DTCO). In this paper, we use our Software+DTCO framework for fully analog neuromorphic inference circuit optimization using ReRAM as an example. The interaction between software machine learning, ReRAM, current comparator, and ReLU are studied. It is found that the neuromorphic circuit is very robust to the variation of ReLU, which confirms the importance of DTCO simulation.
Funding Sponsor
San José State University
Keywords
Circuit Simulation, DTCO, Machine Learning, Neuromorphic, ReLU, ReRAM, Verilog-A
Department
Mathematics and Statistics; Electrical Engineering
Recommended Citation
Anh Nguyen, Hoi Nguyen, Sruthi Venimadhavan, Ayyaswamy Venkattraman, David Parent, and Hiu Yung Wong. "Fully analog ReRAM neuromorphic circuit optimization using DTCO simulation framework" 2020 International Conference on Simulation of Semiconductor Processes and Devices, (SISPAD) (2020): 201-204. https://doi.org/10.23919/SISPAD49475.2020.9241635
