Fabrication and Analysis of a Novel High Voltage Heterojunction p-NiO/n-Ga₂O₃ Diode

Authors

Atsushi Shimbori, The University of Texas at Austin
Hiu Yung Wong, San Jose State UniversityFollow
Alex Q. Huang, The University of Texas at Austin

Publication Date

9-1-2020

Document Type

Conference Proceeding

Publication Title

2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Volume

2020-September

DOI

10.1109/ISPSD46842.2020.9170054

First Page

218

Last Page

221

Abstract

A novel heterojunction NiO/ßGa2 O3 diode was fabricated using p-type NiO deposited by ion-assisted e-beam evaporation on n-type ßGa2 O3 epitaxial wafer. The fabricated diodes exhibited excellent rectifying current-voltage characteristics, with rectifying ratio greater than 106 at ± 4V. The breakdown voltage of the heterojunction diode was 525V for an un-terminated device. The measured specific on-resistance is 2.90m $\Omega\cdot cm^{2}$. The leakage current demonstrates one order of magnitude lower value than that of the comparison Ni/ ßGa2 O3 Schottky barrier diode. The breakdown voltage of the heterojunction NiO/ßGa2 O3 diodes is 4.5 times higher than that of the Ni/ ßGa2 O3 Schottky barrier diode.

Funding Number

NNCI-1542159

Funding Sponsor

National Science Foundation

Keywords

heterojunction, NiO, PIN diode, ßGa2O3, TCAD

Department

Electrical Engineering

Recommended Citation

Atsushi Shimbori, Hiu Yung Wong, and Alex Q. Huang. "Fabrication and Analysis of a Novel High Voltage Heterojunction p-NiO/n-Ga₂O₃ Diode" 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD) (2020): 218-221. https://doi.org/10.1109/ISPSD46842.2020.9170054