Title
Fabrication and Analysis of a Novel High Voltage Heterojunction p-NiO/n-Ga2O3 Diode
Publication Date
9-1-2020
Document Type
Conference Proceeding
Department
Electrical Engineering
Publication Title
2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD)
Volume
2020-September
DOI
10.1109/ISPSD46842.2020.9170054
First Page
218
Last Page
221
Abstract
A novel heterojunction NiO/ßGa2 O3 diode was fabricated using p-type NiO deposited by ion-assisted e-beam evaporation on n-type ßGa2 O3 epitaxial wafer. The fabricated diodes exhibited excellent rectifying current-voltage characteristics, with rectifying ratio greater than 106 at ± 4V. The breakdown voltage of the heterojunction diode was 525V for an un-terminated device. The measured specific on-resistance is 2.90m $\Omega\cdot cm^{2}$. The leakage current demonstrates one order of magnitude lower value than that of the comparison Ni/ ßGa2 O3 Schottky barrier diode. The breakdown voltage of the heterojunction NiO/ßGa2 O3 diodes is 4.5 times higher than that of the Ni/ ßGa2 O3 Schottky barrier diode.
Funding Number
NNCI-1542159
Funding Sponsor
National Science Foundation
Keywords
heterojunction, NiO, PIN diode, ßGa2O3, TCAD
Recommended Citation
Atsushi Shimbori, Hiu Yung Wong, and Alex Q. Huang. "Fabrication and Analysis of a Novel High Voltage Heterojunction p-NiO/n-Ga2O3 Diode" 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD) (2020): 218-221. https://doi.org/10.1109/ISPSD46842.2020.9170054