Title

Fabrication and Analysis of a Novel High Voltage Heterojunction p-NiO/n-Ga2O3 Diode

Publication Date

9-1-2020

Document Type

Conference Proceeding

Department

Electrical Engineering

Publication Title

2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Volume

2020-September

DOI

10.1109/ISPSD46842.2020.9170054

First Page

218

Last Page

221

Abstract

A novel heterojunction NiO/ßGa2 O3 diode was fabricated using p-type NiO deposited by ion-assisted e-beam evaporation on n-type ßGa2 O3 epitaxial wafer. The fabricated diodes exhibited excellent rectifying current-voltage characteristics, with rectifying ratio greater than 106 at ± 4V. The breakdown voltage of the heterojunction diode was 525V for an un-terminated device. The measured specific on-resistance is 2.90m $\Omega\cdot cm^{2}$. The leakage current demonstrates one order of magnitude lower value than that of the comparison Ni/ ßGa2 O3 Schottky barrier diode. The breakdown voltage of the heterojunction NiO/ßGa2 O3 diodes is 4.5 times higher than that of the Ni/ ßGa2 O3 Schottky barrier diode.

Funding Number

NNCI-1542159

Funding Sponsor

National Science Foundation

Keywords

heterojunction, NiO, PIN diode, ßGa2O3, TCAD

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