Title
Fabrication and Analysis of a Novel High Voltage Heterojunction p-NiO/n-Ga2O3 Diode
Publication Date
9-1-2020
Document Type
Conference Proceeding
Publication Title
2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD)
Volume
2020-September
DOI
10.1109/ISPSD46842.2020.9170054
First Page
218
Last Page
221
Abstract
A novel heterojunction NiO/ßGa2 O3 diode was fabricated using p-type NiO deposited by ion-assisted e-beam evaporation on n-type ßGa2 O3 epitaxial wafer. The fabricated diodes exhibited excellent rectifying current-voltage characteristics, with rectifying ratio greater than 106 at ± 4V. The breakdown voltage of the heterojunction diode was 525V for an un-terminated device. The measured specific on-resistance is 2.90m $\Omega\cdot cm^{2}$. The leakage current demonstrates one order of magnitude lower value than that of the comparison Ni/ ßGa2 O3 Schottky barrier diode. The breakdown voltage of the heterojunction NiO/ßGa2 O3 diodes is 4.5 times higher than that of the Ni/ ßGa2 O3 Schottky barrier diode.
Funding Number
NNCI-1542159
Funding Sponsor
National Science Foundation
Keywords
heterojunction, NiO, PIN diode, ßGa2O3, TCAD
Department
Electrical Engineering
Recommended Citation
Atsushi Shimbori, Hiu Yung Wong, and Alex Q. Huang. "Fabrication and Analysis of a Novel High Voltage Heterojunction p-NiO/n-Ga2O3 Diode" 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD) (2020): 218-221. https://doi.org/10.1109/ISPSD46842.2020.9170054
