Analysis of the Effects of Boron Transient Enhanced Diffusion on Threshold Voltage Mismatch in Steep Retrograde Doping NMOSFETs with Inserted Oxygen Layers
Publication Date
7-20-2020
Document Type
Conference Proceeding
Publication Title
2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)
Volume
2020-July
DOI
10.1109/IPFA49335.2020.9260584
Abstract
Steep retrograde doping devices were fabricated using undoped epitaxial Si channels with inserted oxygen layers. The effects of boron transient enhanced diffusion (TED) on threshold voltage (Vth) mismatch were investigated. Suppression of boron TED was effective for reducing Vth mismatch of steep retrograde doping devices as well as flat doping profile devices.
Keywords
Boron, Retrograde doping, Transient enhanced diffusion, Undoped epitaxial channel, Vth mismatch
Department
Electrical Engineering
Recommended Citation
Shuntaro Fujii, Hideki Takeuchi, Soichi Morita, Tatsushi Yagi, Shohei Hamada, Toshiro Sakamoto, Shinji Kawaguchi, Naoki Ishigami, Atsushi Okamoto, Shuji Ikeda, Hiu Yung Wong, Robert J. Mears, and Tsutomu Miyazaki. "Analysis of the Effects of Boron Transient Enhanced Diffusion on Threshold Voltage Mismatch in Steep Retrograde Doping NMOSFETs with Inserted Oxygen Layers" 2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) (2020). https://doi.org/10.1109/IPFA49335.2020.9260584
