RFSOI n-MOSFET OI-Layer Ground-Plane Engineering with Quasi-3D Simulations
Publication Date
9-27-2021
Document Type
Conference Proceeding
Publication Title
2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
DOI
10.1109/SISPAD54002.2021.9592543
First Page
263
Last Page
267
Abstract
Here we demonstrate a novel quasi-3D simulation technique for partially depleted RFSOI MOSFETs, modeling the use of oxygen-inserted (OI) layers to form a p+ ground plane in the SOI by immobilizing boron acceptors within the SOI layer. Using a custom process model, 2D 'slice' device simulations along the device width, and post-processing for the electrostatic potential variation between slices, we show improved potential uniformity due to the 20% to 90% superior body conductance from the ground plane. Results agree with 3D simulations with a matched mesh, although the quasi-3D method allows for a finer mesh suitable for treating the steep doping gradients associated with the OI ground plane.
Department
Electrical Engineering
Recommended Citation
Daniel Connelly, Hiu Yung Wong, Richard Burton, Hideki Takeuchi, and Robert Mears. "RFSOI n-MOSFET OI-Layer Ground-Plane Engineering with Quasi-3D Simulations" 2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (2021): 263-267. https://doi.org/10.1109/SISPAD54002.2021.9592543
