RFSOI n-MOSFET OI-Layer Ground-Plane Engineering with Quasi-3D Simulations
2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
Here we demonstrate a novel quasi-3D simulation technique for partially depleted RFSOI MOSFETs, modeling the use of oxygen-inserted (OI) layers to form a p+ ground plane in the SOI by immobilizing boron acceptors within the SOI layer. Using a custom process model, 2D 'slice' device simulations along the device width, and post-processing for the electrostatic potential variation between slices, we show improved potential uniformity due to the 20% to 90% superior body conductance from the ground plane. Results agree with 3D simulations with a matched mesh, although the quasi-3D method allows for a finer mesh suitable for treating the steep doping gradients associated with the OI ground plane.
Daniel Connelly, Hiu Yung Wong, Richard Burton, Hideki Takeuchi, and Robert Mears. "RFSOI n-MOSFET OI-Layer Ground-Plane Engineering with Quasi-3D Simulations" 2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (2021): 263-267. https://doi.org/10.1109/SISPAD54002.2021.9592543