Fully-Coupled Simulation of the Temperature Effect on Negative Capacitance Ferroelectric Devices

Authors

Abhishek Raol, San Jose State UniversityFollow
Tom Jiao, San Jose State University
Chandana Shashidhara, San Jose State University
Hiu Yung Wong, San Jose State UniversityFollow

Publication Date

4-19-2021

Document Type

Conference Proceeding

Publication Title

2021 IEEE Latin America Electron Devices Conference (LAEDC)

DOI

10.1109/LAEDC51812.2021.9437945

Abstract

In this paper, fully-coupled Landau-Khalatnikov (LK) and semiconductor equations are solved in a fully coupled manner to study the temperature effect on negative capacitance (NC) in ferroelectric (FE) devices the validity of the framework is carefully verified with analytical calculations. LK parameters are calibrated to experiment the temperature effects (100K to 500K) on the FE capacitors and FE junctionless double-gate field-effect transistor (FE-JL-DG-FET) without an internal metal gate are studied. It is found that the FE effect on negative capacitance increases at a lower temperature in both FE capacitor and FET. High dielectric constant (dielectric constant, ϵ_ox = 39) oxide is required to achieve super-steep subthreshold slope (2.9mV/dec) in 300K. If regular silicon dioxide (ϵ_ox = 3.9) is used, a temperature as low as 100K is required to maintain the NC effect. It is also found that at high V_D, the NC effect disappears earlier than low V_D.

Keywords

Ferroelectric, Junctionless FET, Negative Capacitance, TCAD Simulation, Temperature Effect

Department

Electrical Engineering

Recommended Citation

Abhishek Raol, Tom Jiao, Chandana Shashidhara, and Hiu Yung Wong. "Fully-Coupled Simulation of the Temperature Effect on Negative Capacitance Ferroelectric Devices" 2021 IEEE Latin America Electron Devices Conference (LAEDC) (2021). https://doi.org/10.1109/LAEDC51812.2021.9437945