Novel doping engineering techniques for gallium oxide MOSFET to achieve high drive current and breakdown voltage
Publication Date
10-1-2019
Document Type
Conference Proceeding
Publication Title
2019 IEEE 7th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)
DOI
10.1109/WiPDA46397.2019.8998845
First Page
261
Last Page
264
Abstract
Using TCAD simulation, we studied channel and source/drain extension doping and length optimization on lateral normally-ON Ga2O3 junction-less power transistor. A novel gradual channel doping technique under the gate is then proposed with low doping at the source side (for strong gate control and high BV) and high doping on the drain side (for low ON state resistance). By combing the optimization techniques, it is showed that on-state current (ION) can be increased by 650% without degrading the breakdown voltage (BV). A process flow utilizing shadow implantation is also proposed and simulated to achieve lateral gradual channel doping and showed to be promising.
Keywords
Gallium Oxide, Gradual Channel Doping, Junction-less Device, TCAD Simulation, Ultra-Wide-Bandgap Device
Department
Electrical Engineering
Recommended Citation
Johan Saltin, Shiyang Tian, Fei Ding, and Hiu Yung Wong. "Novel doping engineering techniques for gallium oxide MOSFET to achieve high drive current and breakdown voltage" 2019 IEEE 7th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) (2019): 261-264. https://doi.org/10.1109/WiPDA46397.2019.8998845
