TCAD Framework to Estimate the NBTI Degradation in FinFET and GAA NSFET Under Mechanical Strain
Publication Date
9-1-2019
Document Type
Conference Proceeding
Publication Title
2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
DOI
10.1109/SISPAD.2019.8870523
Abstract
A physics-based TCAD framework is used to estimate the interface trap generation (ΔNIT) during Negative Bias Temperature Instability (NBTI) stress in P-channel FinFET and Gate All Around (GAA) Nano-Sheet (NS) FET. The impact of mechanical strain due to channel length scaling (LCH) on ΔNIT generation is estimated. The bandstructure calculations are used to explain the impact of mechanical strain on ΔNIT generation.
Keywords
FinFETs, GAA-NSFET, LCH scaling, mechanical strain, NBTI, RD model
Department
Electrical Engineering
Recommended Citation
Ravi Tiwari, Narendra Parihar, Karansingh Thakor, Hiu Yung Wong, and Souvik Mahapatra. "TCAD Framework to Estimate the NBTI Degradation in FinFET and GAA NSFET Under Mechanical Strain" 2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (2019). https://doi.org/10.1109/SISPAD.2019.8870523
