A 3-D TCAD Framework for NBTI, Part-II: Impact of Mechanical Strain, Quantum Effects, and FinFET Dimension Scaling
Publication Date
5-1-2019
Document Type
Article
Publication Title
IEEE Transactions on Electron Devices
Volume
66
Issue
5
DOI
10.1109/TED.2019.2906293
First Page
2093
Last Page
2099
Abstract
The TCAD framework developed in part-I of this paper is used to study the impact of fin length (FL) and fin width (FW) scaling on interface trap generation (ΔVIT) during negative bias temperature instability (NBTI) in FinFETs. Structure and mechanical stress are obtained by Sentaurus process. Sentaurus device having capture-emission depassivation (CED) and multistate configuration (MSC) models are used for the trap kinetics. The mechanical strain and quantum confinement (QC) impacts are considered. The framework is validated using measured data from p-FinFETs having different FL and FW. The calibrated framework is used to estimate the impact of scaling on NBTI for 14-nm technology node and below. Different scenarios such as iso-stress bias (VGSTR) versus iso-stress overdrive (OD), and devices having iso-workfunction (WF) or iso-off current (IOFF) are used for comparison.
Keywords
Fin length (FL) and fin width (FW) scaling, FinFET, mechanical strain, negative bias temperature instability (NBTI), quantum confinement (QC), TCAD, technology scaling
Department
Electrical Engineering
Recommended Citation
Ravi Tiwari, Narendra Parihar, Karansingh Thakor, Hiu Yung Wong, Steve Motzny, Munkang Choi, Victor Moroz, and Souvik Mahapatra. "A 3-D TCAD Framework for NBTI, Part-II: Impact of Mechanical Strain, Quantum Effects, and FinFET Dimension Scaling" IEEE Transactions on Electron Devices (2019): 2093-2099. https://doi.org/10.1109/TED.2019.2906293
