Modeling of Process (Ge, N) Dependence and Mechanical Strain Impact on NBTI in HKMG SiGe GF FDSOI p-MOSFETs and RMG p-FinFETs
Publication Date
11-28-2018
Document Type
Conference Proceeding
Publication Title
2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
DOI
10.1109/SISPAD.2018.8551724
First Page
167
Last Page
171
Abstract
A physical framework is used to model time kinetics of Negative Bias Temperature Instability (NBTI) in Si and SiGe FDSOI p-MOSFETs and p-FinFETs. The effects of Germanium (Ge%) in the channel and Nitrogen (N%) in the High-K Metal Gate (HKMG) gate stack are explained. Mechanical strain effects in terms of STI to active distance (SA) for FDSOI and channel length (L) scaling for FinFET are explained. Band structure is calculated to correlate the process (Ge%, N%, strain) impact on device degradation. The model is included in Sentaurus Device TCAD to predict NBTI kinetics in Si and SiGe FinFETs.
Keywords
FDSOI, FinFET, GF, L scaling, layout, mechanical strain, NBTI, RD model, RMG, SiGe channel
Department
Electrical Engineering
Recommended Citation
N. Parihar, R. Tiwari, C. Ndiaye, M. Arabi, S. Mhira, H. Wong, S. Motzny, V. Moroz, V. Huard, and S. Mahapatra. "Modeling of Process (Ge, N) Dependence and Mechanical Strain Impact on NBTI in HKMG SiGe GF FDSOI p-MOSFETs and RMG p-FinFETs" 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (2018): 167-171. https://doi.org/10.1109/SISPAD.2018.8551724
