Prediction of highly scaled hydrogen-terminated diamond MISFET performance based on calibrated TCAD simulation

Authors

Hiu Yung Wong, Synopsys IncorporatedFollow
Nelson Braga, Synopsys Incorporated
R. V. Mickevicius, Synopsys Incorporated

Publication Date

11-1-2017

Document Type

Article

Publication Title

Diamond and Related Materials

Volume

80

DOI

10.1016/j.diamond.2017.10.004

First Page

14

Last Page

17

Abstract

TCAD simulation is calibrated to experimental I_DV_D, I_DV_G and f_T data from an H-terminated diamond MISFET from the literature. With one set of self-consistent parameters, experimental data are all well matched. In the calibration process, TCAD is used to study the possible cause of current degradation in some of the devices fabricated in the same process and it is conjectured that the degradation of low field mobility of the two-dimensional hole gas (2DHG) under the gate is the main cause of current degradation. With the calibrated parameters, a highly scaled MISFET is simulated and it is predicted that with the given fabrication process, one can achieve f_T > 100 GHz if the gate length can be scaled down to ~ 0.1 μm.

Keywords

Diamond, Hydrogen-terminated, Power device, RF, TCAD simulation

Department

Electrical Engineering

Recommended Citation

Hiu Yung Wong, Nelson Braga, and R. V. Mickevicius. "Prediction of highly scaled hydrogen-terminated diamond MISFET performance based on calibrated TCAD simulation" Diamond and Related Materials (2017): 14-17. https://doi.org/10.1016/j.diamond.2017.10.004