FinFET NBTI degradation reduction and recovery enhancement through hydrogen incorporation and self-heating
Publication Date
10-25-2017
Document Type
Conference Proceeding
Publication Title
2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
DOI
10.23919/SISPAD.2017.8085274
First Page
101
Last Page
104
Abstract
Negative-Bias Temperature Instability (NBTI) degrades the drive current of p-channel FinFET because defect centers are depassivated as hydrogen diffuses away under negative bias and elevated temperature. We propose incorporating hydrogen in the gate stack to reduce hydrogen depassivation rate and, thus, NBTI degradation. This approach is also expected to enhance NBTI recovery. Besides, we also propose using punch-through stop implant in bulk FinFET as an effective mean for on-chip self-heating and self-healing to enhance NBTI recovery. TCAD simulation is used to verify the ideas.
Keywords
Hydrogen, NBTI, Recovery, Stress, TCAD Simulation
Department
Electrical Engineering
Recommended Citation
Hiu Yung Wong, Steve Motzny, Victor Moroz, Subrat Mishra, and Souvik Mahapatra. "FinFET NBTI degradation reduction and recovery enhancement through hydrogen incorporation and self-heating" 2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (2017): 101-104. https://doi.org/10.23919/SISPAD.2017.8085274
