A physical model of the abnormal behavior of hydrogen-terminated Diamond MESFET
Publication Date
10-25-2017
Document Type
Conference Proceeding
Publication Title
2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
DOI
10.23919/SISPAD.2017.8085332
First Page
333
Last Page
336
Abstract
Hydrogen-terminated Diamond MESFET exhibits abnormal gate capacitance-voltage (CV) relationship, with an insulator barrier-like plateau followed by an abrupt increase in capacitance at large gate bias. A new model is proposed by assuming inhomogeneous band gap in the Interfacial Layer (IL). With this model, various experimental gate CV, as well as gate leakage curves can be matched well with TCAD simulations. This model also offers possible explanation of the double-bumps in transconductance measurements in some experiments.
Keywords
CV, Hydrogen-terminated Diamond, Interfacial Layer, MESFET, Power, RF, Simulation, TCAD
Department
Electrical Engineering
Recommended Citation
Hiu Yung Wong, Nelson Braga, and R. V. Mickevicius. "A physical model of the abnormal behavior of hydrogen-terminated Diamond MESFET" 2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (2017): 333-336. https://doi.org/10.23919/SISPAD.2017.8085332
