Publication Date

5-1-2023

Document Type

Article

Publication Title

ECS Journal of Solid State Science and Technology

Volume

12

Issue

5

DOI

10.1149/2162-8777/accfbe

Abstract

β-Ga2O3 is an emerging material and has the potential to revolutionize power electronics due to its ultra-wide-bandgap (UWBG) and lower native substrate cost compared to Silicon Carbide and Gallium Nitride. Since β-Ga2O3 technology is still not mature, experimental study of β-Ga2O3 is difficult and expensive. Technology-Computer-Aided Design (TCAD) is thus a cost-effective way to study the potentials and limitations of β-Ga2O3 devices. In this paper, TCAD parameters calibrated to experiments are presented. They are used to perform the simulations in heterojunction p-NiO/n-Ga2O3 diode, Schottky diode, and normally-off Ga2O3 vertical FinFET. Besides the current-voltage (I-V) simulations, breakdown, capacitance-voltage (C-V), and short-circuit ruggedness simulations with robust setups are discussed. TCAD Sentaurus is used in the simulations but the methodologies can be applied in other simulators easily. This paves the road to performing a holistic study of β-Ga2O3 devices using TCAD.

Funding Number

ECCS-2134374

Funding Sponsor

National Science Foundation

Creative Commons License

Creative Commons License
This work is licensed under a Creative Commons Attribution-Noncommercial-No Derivative Works 4.0 License.

Department

Electrical Engineering

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