Evaluation of Electron Blur for Different Electron Energies

Publication Date

1-1-2024

Document Type

Article

Publication Title

Journal of Photopolymer Science and Technology

Volume

37

Issue

3

DOI

10.2494/photopolymer.37.315

First Page

315

Last Page

320

Abstract

The transport of slow electrons holds fundamental significance and finds applications across various fields. In extreme ultraviolet (EUV) lithography, electrons generated after EUV photon absorption can initiate chemical reactions, thereby inducing a solubility switch. Investigating electron transport within materials pertinent to EUV lithography is not only of fundamental interest but also aids in understanding and enhancing lithographic resolution. In this study, we employed an experimental approach to measure the effective electron attenuation length (EAL) for electrons within the 10–90 eV energy range across several relevant materials, including poly(4-hydroxystyrene) and chemically amplified resists. The obtained EAL values exhibited minimal dependence on electron energy and ranged between 0.6 and 2.7 nm, varying depending on the material under investigation.

Funding Number

DE-AC02-05CH11231

Funding Sponsor

U.S. Department of Energy

Keywords

Attenuation length, electron blur, EUV photolithography, Inelastic mean free path, Photoresist

Department

General Engineering

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