SSROI (super-steep retrograde on insulator) substrates for RF switch and LNA device performance enhancement
Publication Date
1-1-2024
Document Type
Conference Proceeding
Publication Title
IEEE Electron Devices Technology and Manufacturing Conference: Strengthening the Globalization in Semiconductors, EDTM 2024
DOI
10.1109/EDTM58488.2024.10511370
Abstract
A novel SOI (silicon on insulator) substrate is proposed for RF switch and LNA device performance enhancement. The OI (oxygen insertion)-Si layer and the subsequent undoped Si layer epitaxially grown on a thin SOI starting substrate effectively retain boron in the SOI layer to enable formation of a SSR (super-steep retrograde) channel profile in a regular CMOS flow. The new SSROI substrate reduces body resistance for power handling improvement of RF switch, in addition to reducing the surface channel doping and thus impurity scattering for cutoff frequency improvement of LNA devices.
Keywords
and OI-Si, LNA, RF switch, SOI, SSR channel
Department
Electrical Engineering
Recommended Citation
Hideki Takeuchi, Robert J. Stephenson, Bobby Vine, K. Doran Weeks, Nyles W. Cody, Shuyi Li, Daniel Connelly, Robert J. Mears, Gerd Pfeiffer, Cecile Aulnette, Carole David, and Hiu Yung Wong. "SSROI (super-steep retrograde on insulator) substrates for RF switch and LNA device performance enhancement" IEEE Electron Devices Technology and Manufacturing Conference: Strengthening the Globalization in Semiconductors, EDTM 2024 (2024). https://doi.org/10.1109/EDTM58488.2024.10511370
