Publication Date
1-1-2024
Document Type
Conference Proceeding
Publication Title
Journal of Physics: Conference Series
Volume
2751
Issue
1
DOI
10.1088/1742-6596/2751/1/012013
Abstract
In recent years, two-dimensional (2D) pentagonal ternary monolayers have attracted much attention and emerged as a new class of materials because of their new feature and extensive applicability. Using first-principles density functional theory (DFT) calculations, we predict a new 2D pentagonal-SiPN or p-SiPN monolayer material. The new monolayer has shown to be structurally, thermodynamically, and dynamically stable. Our findings imply that p-SiPN is a wide and indirect bandgap semiconductor, with a highly tunable bandgap with applied equ-biaxial strain. This makes p-SiPN a promising candidate for futuristic optoelectronics and nanomechanics device applications.
Creative Commons License
This work is licensed under a Creative Commons Attribution 4.0 License.
Department
Chemical and Materials Engineering
Recommended Citation
I. A. Qattan, Shambhu Bhandari Sharma, K. C. Santosh, and Sufian Abedrabbo. "New 2D penta-SiPN: A wide and indirect bandgap semiconductor" Journal of Physics: Conference Series (2024). https://doi.org/10.1088/1742-6596/2751/1/012013
