Magnetization switching and detection by PtxSn1−x alloys
Publication Date
6-1-2025
Document Type
Article
Publication Title
Applied Physics Reviews
Volume
12
Issue
2
DOI
10.1063/5.0251598
Abstract
We present spin-orbit torque (SOT) field free magnetization switching and the detection of magnetization at room temperature using Pt and Sn alloys. Observations of the planar Hall effect and weak antilocalization provide evidence of topological features present in the PtSn4. The figures of merit of the spin-torque efficiency and spin-to-charge conversion (SCC) were estimated to be as large as 0.31 ± 0.02 and 0.47 ± 0.08, respectively, in Pt1Sn1. High SOT efficiency, large SCC signal, low magnetization switching current density, and industry compatibility for large-scale production have led to the application of PtxSn1−x alloys in magnetic memory and logic devices.
Funding Number
23-RSG-03-054
Funding Sponsor
Semiconductor Research Corporation
Department
Chemical and Materials Engineering
Recommended Citation
Mahendra Dc, Keita Sakuma, Santosh Kc, Punyashloka Debashis, Christopher Gay, Jennifer Lux, Carly Rogan, Tyrone Wilson, Raphael Toku, Dominique Adams, Fen Xue, John J. Plombon, Joshua Kevek, Tristan A. Tronic, Scott B. Clendenning, Marko Radosavljevic, Masashi Miura, and Shan X. Wang. "Magnetization switching and detection by PtxSn1−x alloys" Applied Physics Reviews (2025). https://doi.org/10.1063/5.0251598
Comments
The published version of the article will be available on 2026-06-01 due to embargo policy