Study of Gate-Oxide Degradation Induced Mobility Change with Cryogenic Measurement
Publication Date
1-1-2025
Document Type
Conference Proceeding
Publication Title
IEEE Workshop on Microelectronics and Electron Devices Wmed
DOI
10.1109/WMED65750.2025.11026933
Abstract
In this paper, n-MOSFET and p-MOSFET are stressed using Fowler-Nordheim (F-N) tunneling and substrate hot carrier injection (HCI) to induce trapped charges. The inversion mobility is extracted and deconvoluted into surface roughness, phonon, and Coulomb mobilities. Using cryogenic measurement at 4.2K, the effect of phonon scattering is removed, allowing an accurate deconvolution of surface roughness and Coulomb mobilities. It is found that besides the Coulomb mobility being degraded after stress, the effective surface roughness mobility is also degraded.
Funding Number
2046220
Funding Sponsor
National Science Foundation
Keywords
Coulomb Scattering, Cryogenic Measurement, Fowler-Nordheim (F-N) tunneling, hot carrier injection (HCI), Surface Roughness Scattering
Department
Electrical Engineering
Recommended Citation
Le Minh Long Nguyen, Yi Ann Chen, Donghun Kang, Hideki Takeuchi, and Hiu Yung Wong. "Study of Gate-Oxide Degradation Induced Mobility Change with Cryogenic Measurement" IEEE Workshop on Microelectronics and Electron Devices Wmed (2025). https://doi.org/10.1109/WMED65750.2025.11026933
