Extreme ultraviolet induced chemistry in polymer thin films
Publication Date
1-1-2025
Document Type
Conference Proceeding
Publication Title
Proceedings of SPIE the International Society for Optical Engineering
Volume
13428
DOI
10.1117/12.3051486
Abstract
Extreme ultraviolet (EUV) lithography relies on the development of advanced photoresist materials with optimized sensitivity, resolution, and etch resistance. Understanding the fundamental mechanisms of EUV-induced chemical transformations is crucial for improving resist performance. In this study, we investigate the EUV-induced degradation of poly(tert-butyl methacrylate) (PtBMA) and its copolymer with poly(4-hydroxystyrene) (P(tBMA-co-HS)). Using mass spectrometry, film thickness measurements, and Fourier-transform infrared (FTIR) spectroscopy, we analyze outgassing behavior, material loss, and molecular transformations in these polymers. Our results reveal that PtBMA undergoes significant fragmentation beyond simple deprotection, leading to higher outgassing and film shrinkage, while P(tBMA-co-HS) exhibits enhanced stability. These findings provide insights into polymer composition effects on EUV resist behavior and inform strategies for designing more robust photoresists for next-generation lithographic applications.
Funding Number
FP00017797
Funding Sponsor
U.S. Department of Energy
Keywords
electron-induced chemistry, extreme ultraviolet (EUV), extreme ultraviolet lithography, lithography, photoresist, polymers, secondary electrons
Department
Chemical and Materials Engineering
Recommended Citation
Oleg Kostko, Honggu Im, Bernhard Luttgenau, Alex Aguilar Oliveros, Cuc Ngan Tran, and Dahyun Oh. "Extreme ultraviolet induced chemistry in polymer thin films" Proceedings of SPIE the International Society for Optical Engineering (2025). https://doi.org/10.1117/12.3051486
