Statistical Cryogenic Characterization of Commercial 14nm FinFETs for Analog Applications

Publication Date

1-1-2026

Document Type

Conference Proceeding

Publication Title

10th IEEE Electron Devices Technology and Manufacturing Conference Emerging Semiconductor Devices and Manufacturing Technologies Edtm 2026

DOI

10.1109/EDTM65772.2026.11496956

Abstract

Cryogenic devices at 4.2K are indispensable in the control electronics for large-scale quantum computers. Due to its small manufacturing volume, a standard commercial foundry process is likely to be used in the near and medium terms. Moreover, 77K electronics are promising for high-speed server applications. Besides digital circuits, analog circuits with non-minimal channel length are particularly important in quantum computing control. In this paper, special structures are designed to characterize the device properties of medium- and long-channel length devices at 292K, 77K, and 4.2K in a commercial 14nm FinFET process. About 100 structures were measured for both NMOS and PMOS. The temperature-dependent characteristics of threshold voltage (VTH,sat), maximum transconductance (gm), on-state current and resistance (ION, RON), subthreshold swing (SS), drain-induced-barrier-lowering (DIBL), output impedance (ROUT), and off-state properties are characterized. Moreover, transistors with different threshold voltages are studied. It is found that low-voltage devices are more suitable for 4.2 K operation due to less Coulomb scattering. Unlike other reports on short-channel devices, it is also found that Rout increases at cryogenic temperature in medium- and long-channel devices, and gmRout can be increased by about 62.5% in p-type long-channel devices.

Funding Number

IO221107-03420-01

Funding Sponsor

Samsung

Keywords

Cryogenic Electronics, FinFET, Quantum Computing

Department

Electrical Engineering

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