Derivation of an Analytical Model to Calculate Junction Depth in HgCdTe Photodiodes

Authors

Stacy H. Gleixner, San Jose State UniversityFollow
H. G. Robinson, SRI International
C. R. Helms, Stanford University

Document Type

Article

Publication Date

2-1-1998

Publication Title

Journal of Applied Physics

Volume

83

Issue Number

3

First Page

1299

Last Page

1304

DOI

10.1063/1.366829

Disciplines

Other Chemical Engineering | Other Materials Science and Engineering

Abstract

Presents an enhanced analytical model to calculate junction depth and Hg interstitial profile during n-on-p junction formation in HgCdTe photodiodes. Detailed information on the enhanced model; Function of the model; Information on HgCdTe; Detailed information on how the model was obtained.

Comments

Copyright © 1998 AIP Publishing LLC. The published article may be found at:http://dx.doi.org/10.1063/1.366829.

Recommended Citation

Stacy H. Gleixner, H. G. Robinson, and C. R. Helms. "Derivation of an Analytical Model to Calculate Junction Depth in HgCdTe Photodiodes" Journal of Applied Physics (1998): 1299-1304. https://doi.org/10.1063/1.366829