Journal of Applied Physics
Presents an enhanced analytical model to calculate junction depth and Hg interstitial profile during n-on-p junction formation in HgCdTe photodiodes. Detailed information on the enhanced model; Function of the model; Information on HgCdTe; Detailed information on how the model was obtained.
Stacy H. Gleixner, H. G. Robinson, and C. R. Helms. "Derivation of an Analytical Model to Calculate Junction Depth in HgCdTe Photodiodes" Journal of Applied Physics (1998): 1299-1304. https://doi.org/10.1063/1.366829