Document Type
Article
Publication Date
2-1-1998
Publication Title
Journal of Applied Physics
Volume
83
Issue Number
3
First Page
1299
Last Page
1304
DOI
10.1063/1.366829
Disciplines
Other Chemical Engineering | Other Materials Science and Engineering
Abstract
Presents an enhanced analytical model to calculate junction depth and Hg interstitial profile during n-on-p junction formation in HgCdTe photodiodes. Detailed information on the enhanced model; Function of the model; Information on HgCdTe; Detailed information on how the model was obtained.
Recommended Citation
Stacy H. Gleixner, H. G. Robinson, and C. R. Helms. "Derivation of an Analytical Model to Calculate Junction Depth in HgCdTe Photodiodes" Journal of Applied Physics (1998): 1299-1304. https://doi.org/10.1063/1.366829
COinS
Comments
Copyright © 1998 AIP Publishing LLC. The published article may be found at:http://dx.doi.org/10.1063/1.366829.