Publication Date
Fall 1995
Degree Type
Master's Project
Degree Name
Master of Science (MS)
Department
General Engineering
First Advisor
Daviid Khalili
Abstract
Rapid thermal oxidation of silicon is widely being utilized in growing very thin oxide films used in applications such as gate dielectric in ULSI MOS devices. RTO can be affected by the size and condition of wafer and heating method. Earlier RTO studies have used smaller wafers. Due to existing competition between device manufacturers, RTO's process development efforts for current 8-inch wafers have remained unpublished.
RTO process for 8-inch silicon wafers was studied. The effects of process variables such as time, temperature, ramp rate, and gas ratio on oxidation were investigated. Tests were conducted at temperature range of 1050-1150 °C and oxidation times of 20-60 seconds.
Activation energies of 0.97-1.26 eV were obtained which describe the oxide growth feasibility. Longer oxidation times verified the second linear growth regime which extends to parabolic region. Isochronal data yielded variable growth sensitivities. A mathematical model based on experimental data was generated.
Recommended Citation
Atanos, Ashur J., "Characterization of Rapid Thermal Oxidation of 200 mm Silicon Wafers for ULSI Applications" (1995). Master's Projects. 1846.
DOI: https://doi.org/10.31979/etd.z5q4-fgbv
https://scholarworks.sjsu.edu/etd_projects/1846
