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Publication Date

Fall 2009

Degree Type

Thesis - Campus Access Only

Degree Name

Master of Science (MS)

Department

Electrical Engineering

Advisor

Sotoudeh Hamedi-Hagh

Subject Areas

Engineering, Electronics and Electrical

Abstract

Bulk complementary metal oxide semiconductor (CMOS) technology was utilized for studying Metal Oxide Semiconductor Field Effect Transistor (MOSFET) radio frequency characterization and modeling. Issues in semiconductor device analyzers and network analyzer measurements were studied and utilized to minimize the errors in the process. Measurements were done on test wafers from a 0.18 microm foundry process. The measurement results were then utilized to extract the parameters for a standard Berkeley Short Channel IGFET Model (BSIM) model.The extracted BSIM model was simulated to study its high frequency behavior and to compare it with measured results. The effect of parasitics on the high-frequency operation of MOSFET and the corresponding modifications required for the BSIM model were analyzed. It was found that the standard BSIM model needs to be fitted with lumped elements to match the high frequency behavior. These extrinsic component values were extracted from the measured S-parameter data of the MOSFET to obtain a bias-dependent small signal frequency fit up to 20GHz. The complete model was then simulated and the results were compared to measured data for known transistor sizes on the same wafer. Good agreement between the measured and the simulated data was observed for the generated model.

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