Short Circuit Ruggedness of Trench Filled Superjunction Devices
2022 IEEE Latin American Electron Devices Conference (LAEDC)
In this study, TCAD simulations are used to construct trench seuperjunction devices with similars BV (∼750V) and Ron,sp < 10mΩ.cm2. TCAD mixed-mode simulation with self-heating is then used to study their short-circuit ruggedness. It is found that 'p-sidewall' and 'charge sheet' have shorter short circuit withstanding time, τsc. High thermal conductivity materials are then proposed to alleviate the problem and verified in TCAD simulations.
Power Transistor, Short Circuit Ruggedness, Superjunction, Trench-Filled Device
Shubhankar Sharma, Yi Zheng, and Hiu Yung Wong. "Short Circuit Ruggedness of Trench Filled Superjunction Devices" 2022 IEEE Latin American Electron Devices Conference (LAEDC) (2022). https://doi.org/10.1109/LAEDC54796.2022.9908223