Short Circuit Ruggedness of Trench Filled Superjunction Devices

Authors

Shubhankar Sharma, San Jose State UniversityFollow
Yi Zheng, Applied Materials Incorporated
Hiu Yung Wong, San Jose State UniversityFollow

Publication Date

1-1-2022

Document Type

Conference Proceeding

Publication Title

2022 IEEE Latin American Electron Devices Conference (LAEDC)

DOI

10.1109/LAEDC54796.2022.9908223

Abstract

In this study, TCAD simulations are used to construct trench seuperjunction devices with similars BV (∼750V) and Ron,sp < 10mΩ.cm². TCAD mixed-mode simulation with self-heating is then used to study their short-circuit ruggedness. It is found that 'p-sidewall' and 'charge sheet' have shorter short circuit withstanding time, τsc. High thermal conductivity materials are then proposed to alleviate the problem and verified in TCAD simulations.

Keywords

Power Transistor, Short Circuit Ruggedness, Superjunction, Trench-Filled Device

Department

Electrical Engineering

Recommended Citation

Shubhankar Sharma, Yi Zheng, and Hiu Yung Wong. "Short Circuit Ruggedness of Trench Filled Superjunction Devices" 2022 IEEE Latin American Electron Devices Conference (LAEDC) (2022). https://doi.org/10.1109/LAEDC54796.2022.9908223