A 3-D TCAD Framework for NBTI - Part I: Implementation Details and FinFET Channel Material Impact

Publication Date

5-1-2019

Document Type

Article

Publication Title

IEEE Transactions on Electron Devices

Volume

66

Issue

5

DOI

10.1109/TED.2019.2906339

First Page

2086

Last Page

2092

Abstract

The time kinetics of interface trap generation and passivation (ΔNIT) and its contribution (ΔVIT) during and after negative bias temperature instability (NBTI) stress is calculated by using Sentaurus TCAD. The framework consists of Sentaurus process for the formation of realistic device structures and to obtain material and strain information, while Sentaurus device is used to implement the double-interface reaction-diffusion (RD) model for trap kinetics. Capture-emission depassivation (CED) model is used for the inversion layer hole and oxide electric field (EOX)-assisted breaking of hydrogen (H) passivated defects at channel/gate insulator interface. Multistate configuration (MSC) model is used for diffusion of atomic and molecular hydrogen (H and H2) and further reactions with other H passivated defects in gate insulator bulk. Quantum effects are considered for hole density, and band structure calculation is used including mechanical strain for CED model parameters. Electron capture in the generated traps during recovery is calculated using transient trap occupancy model (TTOM) and implemented as a postprocessor. Measured data from silicon (Si) and silicon germanium (SiGe) p-channel FinFETs are used for validating the TCAD framework.

Keywords

Band structure, FinFET, negative bias temperature instability (NBTI), reaction-diffusion (RD) model, Si and SiGe channels, TCAD, trap generation and passivation

Department

Electrical Engineering

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