Normally-OFF dual-gate Ga₂O₃ planar MOSFET and FinFET with high I_ON and BV

Authors

Hiu Yung Wong, San Jose State UniversityFollow
N. Braga, Synopsys Incorporated
R. V. Mickevicius, Synopsys Incorporated
F. Ding, Department of Electrical Engineering and Computer Sciences

Publication Date

6-22-2018

Document Type

Conference Proceeding

Publication Title

2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

DOI

10.1109/ISPSD.2018.8393682

First Page

379

Last Page

382

Abstract

Ga₂O₃ is a promising Wide-Band-Gap material for power electronics due to its large bandgap and inexpensive native substrate. However, due to technological difficulties, only normally-ON n-Type junctionless MOSFET (V_th 2O₃ planar MOSFET and FinFET. Through TCAD simulations with calibrated parameters, it is found that normally-OFF dual-gate planar device and FinFET can be achieved with 6X and 1X enhancement in ON-current (I_ON), respectively, as higher doping is allowed, while breakdown voltage is not sacrificed.

Keywords

Cascode, Enhancement Mode, FinFET, Ga2O3, Normally-OFF, Recessed

Department

Electrical Engineering

Recommended Citation

Hiu Yung Wong, N. Braga, R. V. Mickevicius, and F. Ding. "Normally-OFF dual-gate Ga₂O₃ planar MOSFET and FinFET with high I_ON and BV" 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) (2018): 379-382. https://doi.org/10.1109/ISPSD.2018.8393682