Normally-OFF dual-gate Ga2O3 planar MOSFET and FinFET with high ION and BV
2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
Ga2O3 is a promising Wide-Band-Gap material for power electronics due to its large bandgap and inexpensive native substrate. However, due to technological difficulties, only normally-ON n-Type junctionless MOSFET (Vth 2O3 planar MOSFET and FinFET. Through TCAD simulations with calibrated parameters, it is found that normally-OFF dual-gate planar device and FinFET can be achieved with 6X and 1X enhancement in ON-current (ION), respectively, as higher doping is allowed, while breakdown voltage is not sacrificed.
Cascode, Enhancement Mode, FinFET, Ga2O3, Normally-OFF, Recessed
Hiu Yung Wong, N. Braga, R. V. Mickevicius, and F. Ding. "Normally-OFF dual-gate Ga2O3 planar MOSFET and FinFET with high ION and BV" 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) (2018): 379-382. https://doi.org/10.1109/ISPSD.2018.8393682