Document Type
Article
Publication Date
November 2013
Publication Title
Journal of Applied Physics
Volume
114
Issue Number
20
DOI
10.1063/1.4833569
ISSN
0021-8979
Keywords
Metal deposition, Ion scattering spectroscopy, Oxides, Inorganic compounds, Electron beams, Chemical elements, Free energy, Thin film deposition, Dielectric properties, Semiconductors
Disciplines
Chemical Engineering | Materials Science and Engineering
Abstract
The interfacial chemistry of thin Al (∼3 nm) and Hf (∼2 nm) metal films deposited by electron beam (e-beam) evaporation on native oxide InP (100) samples at room temperature and after annealing has been studied by in situ angle resolved X-ray photoelectron spectroscopy and low energy ion scattering spectroscopy. The In-oxides are completely scavenged forming In-In/In-(Al/Hf) bonding after Al and Hf metal deposition. The P-oxide concentration is significantly decreased, and the P-oxide chemical states have been changed to more P-rich oxides upon metal deposition. Indium diffusion through these metals before and after annealing at 250 °C has also been characterized. First principles calculation shows that In has lower surface formation energy compared with Al and Hf metals, which is consistent with the observed indium diffusion behavior.
Recommended Citation
H. Dong, Santosh KC, A. Azcatl, W. Cabrera, X. Qin, B. Brennan, D. Zhernokletov, K. Cho, and R. Wallace. "In-situ study of e-beam Al and Hf metal deposition on native oxide InP (100)" Journal of Applied Physics (2013). https://doi.org/10.1063/1.4833569
Comments
SJSU users: Use the following link to login and access the article via SJSU databases.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Journal of Applied Physics volume 114, issue 20, 2013, and may be found at https://doi.org/10.1063/1.4833569© 2013 AIP Publishing LLC.