Monolayer MoS2 Bandgap Modulation by Dielectric Environments and Tunable Bandgap Transistors

Authors

Junga Ryou, Korea Research Institute of Standards and Science
Yong-Sung Kim, University of Science and Technology
Santosh KC, University of Texas at Dallas
Kyeongjae Cho, The University of Texas at Dallas

Document Type

Article

Publication Date

July 2016

Publication Title

Scientific Reports

Volume

6

DOI

10.1038/srep29184

Disciplines

Engineering | Materials Science and Engineering

Abstract

Semiconductors with a moderate bandgap have enabled modern electronic device technology, and the current scaling trends down to nanometer scale have introduced two-dimensional (2D) semiconductors. The bandgap of a semiconductor has been an intrinsic property independent of the environments and determined fundamental semiconductor device characteristics. In contrast to bulk semiconductors, we demonstrate that an atomically thin two-dimensional semiconductor has a bandgap with strong dependence on dielectric environments. Specifically, monolayer MoS2 bandgap is shown to change from 2.8 eV to 1.9 eV by dielectric environment. Utilizing the bandgap modulation property, a tunable bandgap transistor, which can be in general made of a two-dimensional semiconductor, is proposed.

Comments

SJSU users: Use the following link to login and access the article via SJSU databases.This article was published in Scientific Reports, volume 6, 2016, and can also be found online here.Copyright © 2016, The Authors

Recommended Citation

Junga Ryou, Yong-Sung Kim, Santosh KC, and Kyeongjae Cho. "Monolayer MoS2 Bandgap Modulation by Dielectric Environments and Tunable Bandgap Transistors" Scientific Reports (2016). https://doi.org/10.1038/srep29184

Creative Commons License

This work is licensed under a Creative Commons Attribution 4.0 License.